TIGHT-BINDING STUDY OF THE METAL VACANCY IN ZINC SELENIDE

被引：6

作者：

PECHEUR, P

VANDEREST, J

TOUSSAINT, G

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1985年 / 72卷 / 1-2期

关键词：

D O I：

10.1016/0022-0248(85)90133-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：147 / 150

页数：4

共 11 条

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[2] NONLOCAL PSEUDOPOTENTIAL CALCULATIONS FOR ELECTRONIC-STRUCTURE OF 11 DIAMOND AND ZINCBLENDE SEMICONDUCTORS
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COHEN, ML
[J]. PHYSICAL REVIEW B, 1976, 14 (02): : 556 - 582
[3] ELECTRONIC-STRUCTURE BASED ON LOCAL ATOMIC ENVIRONMENT FOR TIGHT-BINDING BANDS
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HEINE, V
KELLY, MJ
[J]. JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1972, 5 (20): : 2845 - &
[4] THE RECUSION METHOD - APPLICATION TO IDEAL AND RECONSTRUCTED VACANCIES IN DIAMOND AND SILICON
JONES, R
KING, T
[J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1983, 48 (04): : 391 - 396
[5] THE ELECTRONIC-STRUCTURE AND STABILITY OF LOCALIZED DEFECTS IN SEMICONDUCTORS .2. VACANCIES IN SILICON, GALLIUM-PHOSPHIDE AND ZINC SELENIDE
KIRTON, MJ
BANKS, PW
LIAN, LD
JAROS, M
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (14): : 2487 - 2503
[6] GREENS-FUNCTION CALCULATION OF THE LATTICE RESPONSE NEAR THE VACANCY IN SILICON
LANNOO, M
ALLAN, G
[J]. PHYSICAL REVIEW B, 1982, 25 (06): : 4089 - 4101
[7] LANNOO M, 1983, 12TH P INT C DEF SEM, P63
[8] ELECTRONIC-STRUCTURE OF THE JAHN-TELLER DISTORTED VACANCY IN SILICON
LIPARI, NO
BERNHOLC, J
PANTELIDES, ST
[J]. PHYSICAL REVIEW LETTERS, 1979, 43 (18) : 1354 - 1357
[9] IDENTIFICATION AND PROPERTIES OF DEFECTS IN GAP
SCHEFFLER, M
PANTELIDES, ST
LIPARI, NO
BERNHOLC, J
[J]. PHYSICAL REVIEW LETTERS, 1981, 47 (06) : 413 - 416
[10] VANDERREST J, 1984, J PHYS C SOLID STATE, V17, P85, DOI 10.1088/0022-3719/17/1/015

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