共 22 条
[1]
ASTIER M, 1979, I PHYS C SER, V46, pCH2
[2]
DEFECTS IN DIAMOND - THE UNRELAXED VACANCY AND SUBSTITUTIONAL NITROGEN
[J].
PHYSICAL REVIEW B,
1981, 24 (08)
:4736-4744
[3]
THEORY OF THE SILICON VACANCY - AN ANDERSON NEGATIVE-U SYSTEM
[J].
PHYSICAL REVIEW B,
1980, 21 (12)
:5662-5686
[4]
SCATTERING-THEORETIC METHOD FOR DEFECTS IN SEMICONDUCTORS .2. SELF-CONSISTENT FORMULATION AND APPLICATION TO THE VACANCY IN SILICON
[J].
PHYSICAL REVIEW B,
1980, 21 (08)
:3545-3562
[5]
Clementi E., 1965, TABLES ATOMIC FUNCTI
[6]
HAYDOCK R, 1980, SOLID STATE PHYS, V35, P215
[7]
ENERGY-LEVELS IN IDEAL AND RECONSTRUCTED MODELS OF A SILICON VACANCY
[J].
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS,
1981, 14 (31)
:4603-4609
[8]
SELF-CONSISTENT PSEUDOPOTENTIAL CALCULATION OF ELECTRONIC STATES ASSOCIATED WITH A RECONSTRUCTED SILICON VACANCY
[J].
PHYSICAL REVIEW B,
1979, 19 (06)
:3137-3151
[9]
THE RECURSION METHOD AND A 1ST-PRINCIPLES TIGHT-BINDING CALCULATION OF THE BAND STRUCTURES OF DIAMOND AND SILICON
[J].
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES,
1983, 47 (05)
:481-490
[10]
CALCULATION OF ENERGY-LEVELS OF A NEUTRAL VACANCY AND OF SELF-INTERSTITIALS IN SILICON
[J].
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS,
1976, 9 (12)
:2319-2330