THE RECUSION METHOD - APPLICATION TO IDEAL AND RECONSTRUCTED VACANCIES IN DIAMOND AND SILICON

被引:3
作者
JONES, R
KING, T
机构
来源
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1983年 / 48卷 / 04期
关键词
D O I
10.1080/13642818308246490
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
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页码:391 / 396
页数:6
相关论文
共 22 条
[1]  
ASTIER M, 1979, I PHYS C SER, V46, pCH2
[2]   DEFECTS IN DIAMOND - THE UNRELAXED VACANCY AND SUBSTITUTIONAL NITROGEN [J].
BACHELET, GB ;
BARAFF, GA ;
SCHLUTER, M .
PHYSICAL REVIEW B, 1981, 24 (08) :4736-4744
[3]   THEORY OF THE SILICON VACANCY - AN ANDERSON NEGATIVE-U SYSTEM [J].
BARAFF, GA ;
KANE, EO ;
SCHLUTER, M .
PHYSICAL REVIEW B, 1980, 21 (12) :5662-5686
[4]   SCATTERING-THEORETIC METHOD FOR DEFECTS IN SEMICONDUCTORS .2. SELF-CONSISTENT FORMULATION AND APPLICATION TO THE VACANCY IN SILICON [J].
BERNHOLC, J ;
LIPARI, NO ;
PANTELIDES, ST .
PHYSICAL REVIEW B, 1980, 21 (08) :3545-3562
[5]  
Clementi E., 1965, TABLES ATOMIC FUNCTI
[6]  
HAYDOCK R, 1980, SOLID STATE PHYS, V35, P215
[7]   ENERGY-LEVELS IN IDEAL AND RECONSTRUCTED MODELS OF A SILICON VACANCY [J].
HEGGIE, M ;
JONES, R .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1981, 14 (31) :4603-4609
[8]   SELF-CONSISTENT PSEUDOPOTENTIAL CALCULATION OF ELECTRONIC STATES ASSOCIATED WITH A RECONSTRUCTED SILICON VACANCY [J].
JAROS, M ;
RODRIGUEZ, CO ;
BRAND, S .
PHYSICAL REVIEW B, 1979, 19 (06) :3137-3151
[9]   THE RECURSION METHOD AND A 1ST-PRINCIPLES TIGHT-BINDING CALCULATION OF THE BAND STRUCTURES OF DIAMOND AND SILICON [J].
JONES, R ;
KING, T .
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1983, 47 (05) :481-490
[10]   CALCULATION OF ENERGY-LEVELS OF A NEUTRAL VACANCY AND OF SELF-INTERSTITIALS IN SILICON [J].
KAUFFER, E ;
PECHEUR, P ;
GERL, M .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1976, 9 (12) :2319-2330