THE RECUSION METHOD - APPLICATION TO IDEAL AND RECONSTRUCTED VACANCIES IN DIAMOND AND SILICON

被引:3
作者
JONES, R
KING, T
机构
来源
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1983年 / 48卷 / 04期
关键词
D O I
10.1080/13642818308246490
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:391 / 396
页数:6
相关论文
共 22 条
[11]   GREENS-FUNCTION CALCULATION OF THE LATTICE RESPONSE NEAR THE VACANCY IN SILICON [J].
LANNOO, M ;
ALLAN, G .
PHYSICAL REVIEW B, 1982, 25 (06) :4089-4101
[12]  
LANNOO M, 1979, I PHYS C SER, V46, pCH1
[13]   ELECTRONIC-STRUCTURE OF THE JAHN-TELLER DISTORTED VACANCY IN SILICON [J].
LIPARI, NO ;
BERNHOLC, J ;
PANTELIDES, ST .
PHYSICAL REVIEW LETTERS, 1979, 43 (18) :1354-1357
[14]   SELF-CONSISTENT ELECTRONIC STATES FOR RECONSTRUCTED SI VACANCY MODELS [J].
LOUIE, SG ;
SCHLUTER, M ;
CHELIKOWSKY, JR ;
COHEN, ML .
PHYSICAL REVIEW B, 1976, 13 (04) :1654-1663
[15]   RELAXATION ABOUT VACANCY IN DIAMOND [J].
MAINWOOD, A .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1978, 11 (13) :2703-2710
[16]   ABINITIO TREATMENT OF SILICON DEFECT CLUSTERS - THE UNRELAXED, NEUTRAL MONOVACANCY [J].
MALVIDO, JC ;
WHITTEN, JL .
PHYSICAL REVIEW B, 1982, 26 (08) :4458-4472
[17]   MOLECULAR-ORBITAL TREATMENT FOR DEEP LEVELS IN SEMICONDUCTORS - SUBSTITUTIONAL NITROGEN AND LATTICE VACANCY IN DIAMOND [J].
MESSMER, RP ;
WATKINS, GD .
PHYSICAL REVIEW B, 1973, 7 (06) :2568-2590
[18]   NEGATIVE-U PROPERTIES OF THE LATTICE VACANCY IN SILICON [J].
NEWTON, JL ;
CHATTERJEE, AP ;
HARRIS, RD ;
WATKINS, GD .
PHYSICA B & C, 1983, 116 (1-3) :219-223
[19]   SLATER-KOSTER PARAMETRIZATION FOR SI AND THE IDEAL-VACANCY CALCULATION [J].
PAPACONSTANTOPOULOS, DA ;
ECONOMOU, EN .
PHYSICAL REVIEW B, 1980, 22 (06) :2903-2907
[20]   DEEP LEVELS DUE TO ISOLATED SINGLE AND PAIR VACANCIES IN C, SI AND GE [J].
TALWAR, DN ;
TING, CS .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1982, 15 (32) :6573-6584