DEPOSITION OF COPPER-FILMS BY UNBALANCED DC MAGNETRON SPUTTERING

The electrical resistivity of as deposited polycrystalline copper thin films as a function of varying the process parameters has been investigated. Trying to minimize the resistivity of the copper thin films is important in the semiconductor industry, due to the fact that low resistivity copper can be employed to great advantage for new metallization schemes in advanced ultralarge scale integrated circuits. This paper presents the optimum choice of parameters that are necessary to achieve low resistivities of the thin films in reproducible experiments. All the depositions were performed using an unbalanced d.c. planar magnetron sputtering source (consisting of a circular copper target (98 % purity, 0.01% Fe, 0.005 % Ni, 0.005 % Si) with a diameter of 100 mm fitted with two electromagnets). The copper thin films were deposited onto glass substrates with argon being used as the sputtering gas. The resistivity was studied as a function of the pressure of the sputtering gas, the substrate bias, the substrate to target distance, the magnetron power, and the substrate temperature. It was found that depositions producing thin films with a resistivity of that approaching, the bulk material (1.7 x 10(-8)Ohm m) were obtained if the sputtering gas pressure was below 0.2 Pa. The effect of the substrate bias was insignificant at these pressures. The crystallographic structure of the copper thin films, determined by X-ray diffraction, is also reported.