INVESTIGATION OF THE CATIONIC ORDERING IN INGAP/GAAS EPILAYERS GROWN BY LOW-PRESSURE, METAL-ORGANIC VAPOR-PHASE EPITAXY

被引：8

作者：

FRANCESIO, L

FRANZOSI, P

CALDIRONI, M

VITALI, L

DELLAGIOVANNA, M

DIPAOLA, A

VIDIMARI, E

PELLEGRINO, S

机构：

[1] CNR,INST MASPEC,I-43100 PARMA,ITALY

[2] TELETTRA SPA,ALCATEL,I-20059 VIMERCATE,ITALY

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1994年 / 28卷 / 1-3期

关键词：

SEMICONDUCTORS; X-RAY DIFFRACTION; LAYER STRUCTURES; ORDER;

D O I：

10.1016/0921-5107(94)90051-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Lattice-matched (Delta a/a approximate to 1 x 10(-3))/GaAs heteroepitaxial layers were grown by low-pressure vapour phase epitaxy and investigated by X-ray diffraction and photoluminescence. Different substrate miscut angles and dopings were investigated. The results show that ordering occurs in the cationic sublattice; the order depends on the substrate miscut and disappears with an increase in the concentration of dopants substituted on the cation sublattice. The correlation between order and photoluminescence anomalies was also investigated.

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收藏

页码：219 / 223

页数：5

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