ELECTRON-DRIFT-VELOCITY MEASUREMENTS IN SILICON AT HIGH TEMPERATURES AND THEIR EMPIRICAL RELATION TO ELECTRIC-FIELD

被引：3

作者：

CANALI, C ^{[1
]}

MAJNI, G ^{[1
]}

MINDER, R ^{[1
]}

OTTAVIANI, G ^{[1
]}

机构：

[1] UNIV MODENA, IST FIS, 4 VIA UNIV, 41100 MODENA, ITALY

来源：

ELECTRONICS LETTERS | 1974年 / 10卷 / 24期

关键词：

D O I：

10.1049/el:19740415

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：523 / 524

页数：2

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[1] DRIFT VELOCITY OF ELECTRONS AND HOLES AND ASSOCIATED ANISOTROPIC EFFECTS IN SILICON
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[7] JACOBONI C, TO BE PUBLISHED
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