EFFECTS OF PROCESS PARAMETER DISTRIBUTIONS AND ION STRIKE LOCATIONS ON SEU CROSS-SECTION DATA

被引：45

作者：

MASSENGILL, LW ^{[1
]}

ALLES, ML ^{[1
]}

KERNS, SE ^{[1
]}

JONES, KL ^{[1
]}

机构：

[1] MOTOROLA INC,AUSTIN,TX

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1993年 / 40卷 / 06期

关键词：

D O I：

10.1109/23.273476

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effect of statistical parameter distributions and stochastic ion strike locations in hardened memory arrays on observed SEU cross-section data is discussed. Application of numerical analysis to the parasitic bipolar gain distributions in SIMOX SRAMs and the introduction of an effective critical charge based on sensitivities to ion strike locations, explains and quantifies the non-saturating behavior of measured cross-section curves in SOI and other hardened memories.

引用

页码：1804 / 1811

页数：8

共 10 条

[1] BODY TIE PLACEMENT IN CMOS SOI DIGITAL CIRCUITS FOR TRANSIENT RADIATION ENVIRONMENTS [J].