MODEL FOR CMOS/SOI SINGLE-EVENT VULNERABILITY

被引：47

作者：

KERNS, SE ^{[1
]}

MASSENGILL, LW ^{[1
]}

KERNS, DV ^{[1
]}

ALLES, ML ^{[1
]}

HOUSTON, TW ^{[1
]}

LU, H ^{[1
]}

HITE, LR ^{[1
]}

机构：

[1] TEXAS INSTRUMENTS INC,DALLAS,TX 75230

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1989年 / 36卷 / 06期

关键词：

21;

D O I：

10.1109/23.45440

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2305 / 2310

页数：6

共 21 条

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