PLASMON ENERGY-LOSS ANALYSIS OF EPITAXIAL LAYERS IN SILICON AND GERMANIUM

被引：2

作者：

DITCHFIELD, RW

CULLIS, AG

机构：

[1] ROY NAVAL ENGN COLL,PLYMOUTH PL5 3AQ,ENGLAND

[2] ROY SIGNALS & RADAR ESTAB,WORCESTERSHIRE WR14 3PS,ENGLAND

来源：

MICRON | 1976年 / 7卷 / 02期

关键词：

D O I：

10.1016/0047-7206(76)90056-X

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

引用

页码：133 / 140

页数：8

共 9 条

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[J]. BRITISH JOURNAL OF APPLIED PHYSICS, 1962, 13 (09): : 446 - &
[2] EPITAXIAL GROWTH OF SILICON AND GERMANIUM FILMS ON (111) SILICON SURFACES USING UHV SUBLIMATION AND EVAPORATION TECHNIQUES
CULLIS, AG
BOOKER, GR
[J]. JOURNAL OF CRYSTAL GROWTH, 1971, 9 (01) : 132 - &
[3] CULLIS AG, 1972, THESIS U OXFORD
[4] STUDIES OF SEGREGATION AND INITIAL STAGES OF PRECIPITATION AT GRAIN BOUNDARIES IN AN ALUMINIUM 7 WT PERCENT MAGNESIUM ALLOY WITH AN ENERGY ANALYSING ELECTRON MICROSCOPE
CUNDY, SL
METHERELL, AJ
WHELAN, MJ
UNWIN, PNT
NICHOLSON, RB
[J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1968, 307 (1490) : 267 - +
[5] AN ENERGY ANALYSING ELECTRON MICROSCOPE
CUNDY, SL
METHERELL, AJ
WHELAN, MJ
[J]. JOURNAL OF SCIENTIFIC INSTRUMENTS, 1966, 43 (10): : 712 - +
[6] ELECTRON-ENERGY LOSS STUDIES OF POLYMERS DURING RADIATION-DAMAGE
DITCHFIELD, RW
GRUBB, DT
WHELAN, MJ
[J]. PHILOSOPHICAL MAGAZINE, 1973, 27 (06) : 1267 - 1280
[7] CARBIDE CONTAMINATION OF SILICON SURFACES
HENDERSON, RC
MARCUS, RB
POLITO, WJ
[J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (03) : 1208 - +
[8] A STUDY OF NUCLEATION IN CHEMICALLY GROWN EPITAXIAL SILICON FILMS USING MOLECULAR BEAM TECHNIQUES .3. NUCLEATION RATE MEASUREMENTS AND EFFECT OF OXYGEN ON INITIAL GROWTH BEHAVIOUR
JOYCE, BA
BRADLEY, RR
BOOKER, GR
[J]. PHILOSOPHICAL MAGAZINE, 1967, 15 (138): : 1167 - &
[9] PETTIT HR, 1971, EMAG C P, P290

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