A BETTER UNDERSTANDING OF THE CHANNEL MOBILITY OF SI MOSFETS BASED ON THE PHYSICS OF QUANTIZED SUBBANDS

被引：19

作者：

LIN, MS

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1988年 / 35卷 / 12期

关键词：

D O I：

10.1109/16.8822

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：2406 / 2411

页数：6

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