OXIDATION OF SILICON IN HIGH-PRESSURE STEAM

被引：12

作者：

TSUBOUCHI, N

MIYOSHI, H

NISHIMOTO, A

ABE, H

机构：

[1] MITSUBISHI ELECT CORP,LSI DEV LAB,MIZUHARA,ITAMI 664,JAPAN

[2] COMP DEV LABS LTD,MIZUHARA,ITAMI 664,JAPAN

来源：

关键词：

D O I：

10.1143/JJAP.16.855

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：855 / 856

页数：2

共 7 条

[1] GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON [J].

DEAL, BE ;

GROVE, AS .

[2]

GROVE AS, 1967, PHYS TECHNOL S, P27

LIGENZA, JR .

[4]

LIGENZA JR, 1962, J ELECTROCHEM SOC, V109, P1

[5]

PANOUSIS PT, 1973, SPR ECS M PRINC, P137

PLISKIN, WA .

[7]

TSUBOUCHI N, TO BE PUBLISHED