EVALUATION OF ION-IMPLANTATION CHARGING BY USING EEPROM

被引：2

作者：

AOKI, N

ISHIKAWA, K

NAMURA, T

FUKUZAKI, Y

FUSE, G

YOSHIDA, M

INOUE, M

机构：

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1993年 / 74卷 / 1-2期

关键词：

D O I：

10.1016/0168-583X(93)95066-E

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

loon implantation charging has been studied by evaluation of the threshold voltage shift (DELTAV(t)) of EEPROM devices. The threshold voltage shifted proportionally with the variation of the electron emission current. This method allows the uniformity of charging within a wafer to be evaluated exactly, and has also shown excellent repeatability. The oxide breakdown frequency of the MOS capacitor showed good agreement with the threshold voltage shift. Consequently, the EEPROM threshold voltage shift measurement was found to be very useful in the development of systems which retard charge buildup.

引用

页码：306 / 310

页数：5

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