VACUUM HOT-PRESSING OF GERMANIUM AND SILICON-GERMANIUM ALLOYS

被引：9

作者：

BUNCE, RW ^{[1
]}

ROWE, DM ^{[1
]}

机构：

[1] UWIST,DEPT PHYS ELECTR & ELECT ENGN,CARDIFF CF1 3NU,WALES

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1977年 / 10卷 / 06期

关键词：

D O I：

10.1088/0022-3727/10/6/018

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：941 / &

共 13 条

[1]

DISMUKES JP, 1965, T METALL SOC AIME, V233, P672

[2] THERMAL + ELECTRICAL PROPERTIES OF HEAVILY DOPED GE-SI ALLOYS UP TO 1300 DEGREES K [J].

DISMUKES, JP ;

EKSTROM, E ;

BEERS, DS ;

STEIGMEIER, EF ;

KUDMAN, I .

JOURNAL OF APPLIED PHYSICS, 1964, 35 (10) :2899-&

[3]

Fistul' V.I., 1969, HEAVILY DOPED SEMICO, VVolume 1

[4] KINETICS AND MECHANISM OF OXYGEN ADSORPTION ON SINGLE CRYSTALS OF GERMANIUM [J].

GREEN, M ;

LIBERMAN, A .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1962, 23 (OCT) :1407-+

[5]

LAUDER JJ, 1962, J APPL PHYS, V33, P2089

[6]

OMELYANOVSKI EM, 1963, THESIS

[7] THERMOELECTRICITY AND THERMOELECTRIC POWER GENERATION [J].

ROSI, FD .

SOLID-STATE ELECTRONICS, 1968, 11 (09) :833-&

[8] THERMOELECTRIC PROPERTIES OF HEAVILY DOPED HOT-PRESSED GERMANIUM-SILICON ALLOYS [J].

ROWE, DM ;

BUNCE, RW .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1969, 2 (11) :1497-&

[9] APPARATUS FOR MEASURING RESISTIVITY AND HALL COEFFICIENT OF HEAVILY DOPED SEMICONDUCTORS AT HIGH TEMPERATURES [J].

ROWE, DM ;

BUNCE, RW .

JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1971, 4 (11) :902-&

[10] ELECTRICAL PROPERTIES OF HOT-PRESSED GERMANIUM-SILICON-BORON ALLOYS [J].

ROWE, DM .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1975, 8 (09) :1092-1103

← 1 2 →