CALCULATION OF TUNNELING CURRENTS IN (HG,CD)TE PHOTODIODES USING A 2-SIDED JUNCTION POTENTIAL

被引：6

作者：

BECK, WA

BYER, NE

机构：

来源：

关键词：

D O I：

10.1109/T-ED.1984.21517

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：292 / 297

页数：6

共 11 条

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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 : 495 - 500
[5] DORNHAUS R, 1976, SOLID STATE PHYSICS, P37
[6] Duke C. B., 1969, TUNNELING SOLIDS
[7] CCD READOUT OF INFRARED HYBRID FOCAL-PLANE ARRAYS
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[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (01) : 175 - 188
[8] MCNALLY PJ, 1973, AD762352
[9] RANGE AND RANGE STRAGGLING OF ION-IMPLANTED BORON IN CD0.2HG0.8TE
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JAHNEL, F
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1980, 57 (02): : 619 - 624
[10] INTRINSIC CARRIER CONCENTRATION OF HG1-CHICDCHITE AS A FUNCTION OF CHI AND T USING K-P CALCULATIONS
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