EFFECT OF COULOMB SCATTERING IN N-TYPE SILICON INVERSION-LAYERS

被引：23

作者：

MANZINI, S

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 57卷 / 02期

关键词：

D O I：

10.1063/1.334765

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：411 / 414

页数：4

共 12 条

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