VACUUM THERMAL ETCHING OF GERMANIUM AND SILICON SURFACES

[1] EMISSIVITY AT 0.65 MICRON OF SILICON AND GERMANIUM AT HIGH TEMPERATURES [J]. JOURNAL OF APPLIED PHYSICS, 1957, 28 (12) : 1510 - 1511

[2] DIFFUSION OF IMPURITIES INTO EVAPORATING SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (02) : 259 - 264

[3] Cabrera N., 1958, GROWTH PERFECTION CR, P393

[4] EVAPORATION-CONDENSATION METHOD FOR MAKING GERMANIUM LAYERS FOR TRANSISTOR PURPOSES [J]. SOLID-STATE ELECTRONICS, 1963, 6 (03) : 265 - &

[5] WORK FUNCTION AND SORPTION PROPERTIES OF SILICON CRYSTALS [J]. JOURNAL OF APPLIED PHYSICS, 1958, 29 (08) : 1195 - 1202

[6] DOREMUS, 1958, GROWTH PERFECTION ED, P411

[7] DOREMUS, 1958, GROWTH PERFECTION ED, P393

[8] FARNSWORTH HE, 1959, J PHYS CHEM SOLIDS, V8, P116

[9] Frank F. C., 1958, GROWTH PERFECTION CR, P411

[10] EPITAXIAL GROWTH OF GALLIUM ARSENIDE ON GERMANIUM SUBSTRATES .2. DETERIORATION OF THE (III) SURFACE OF GERMANIUM AT 570-DEGREES-C-850-DEGREES-C [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (07) : 821 - 824

[1] EMISSIVITY AT 0.65 MICRON OF SILICON AND GERMANIUM AT HIGH TEMPERATURES [J]. JOURNAL OF APPLIED PHYSICS, 1957, 28 (12) : 1510 - 1511

[2] DIFFUSION OF IMPURITIES INTO EVAPORATING SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (02) : 259 - 264

[3] Cabrera N., 1958, GROWTH PERFECTION CR, P393

[4] EVAPORATION-CONDENSATION METHOD FOR MAKING GERMANIUM LAYERS FOR TRANSISTOR PURPOSES [J]. SOLID-STATE ELECTRONICS, 1963, 6 (03) : 265 - &

[5] WORK FUNCTION AND SORPTION PROPERTIES OF SILICON CRYSTALS [J]. JOURNAL OF APPLIED PHYSICS, 1958, 29 (08) : 1195 - 1202

[6] DOREMUS, 1958, GROWTH PERFECTION ED, P411

[7] DOREMUS, 1958, GROWTH PERFECTION ED, P393

[8] FARNSWORTH HE, 1959, J PHYS CHEM SOLIDS, V8, P116

[9] Frank F. C., 1958, GROWTH PERFECTION CR, P411

[10] EPITAXIAL GROWTH OF GALLIUM ARSENIDE ON GERMANIUM SUBSTRATES .2. DETERIORATION OF THE (III) SURFACE OF GERMANIUM AT 570-DEGREES-C-850-DEGREES-C [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (07) : 821 - 824