RECOMBINATION OF CARRIERS AT N-SI/SIO2 INTERFACE VIA MOBILE CENTERS IN THE OXIDE

被引：6

作者：

KAMIENIECKI, E ^{[1
]}

机构：

[1] GTE LABS INC,WALTHAM,MA 02254

来源：

关键词：

D O I：

10.1063/1.335220

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2840 / 2843

页数：4

共 17 条

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