ELECTRICAL-PROPERTIES OF INAS EPILAYERS GROWN BY MOLECULAR-BEAM EPITAXY ON SI SUBSTRATES

被引：25

作者：

KALEM, S ^{[1
]}

CHYI, J ^{[1
]}

LITTON, CW ^{[1
]}

MORKOC, H ^{[1
]}

KAN, SC ^{[1
]}

YARIV, A ^{[1
]}

机构：

[1] CALTECH,PASADENA,CA 91125

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 07期

关键词：

D O I：

10.1063/1.99857

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：562 / 564

页数：3

共 18 条

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[10] RELATIONSHIP OF MBE GROWTH-PARAMETERS WITH THE ELECTRICAL-PROPERTIES OF THIN (100) INAS EPILAYERS [J].

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