ELECTRICAL-PROPERTIES OF INAS EPILAYERS GROWN BY MOLECULAR-BEAM EPITAXY ON SI SUBSTRATES

被引：25

作者：

KALEM, S ^{[1
]}

CHYI, J ^{[1
]}

LITTON, CW ^{[1
]}

MORKOC, H ^{[1
]}

KAN, SC ^{[1
]}

YARIV, A ^{[1
]}

机构：

[1] CALTECH,PASADENA,CA 91125

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 07期

关键词：

D O I：

10.1063/1.99857

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：562 / 564

页数：3

共 18 条

[11] 1ST STAGES OF THE MBE GROWTH OF INAS ON (001)GAAS [J].

HOUZAY, F ;

GUILLE, C ;

MOISON, JM ;

HENOC, P ;

BARTHE, F .

JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) :67-72

[12] THE THEORY OF ELECTRONIC CONDUCTION IN POLAR SEMI-CONDUCTORS [J].

HOWARTH, DJ ;

SONDHEIMER, EH .

PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1953, 219 (1136) :53-74

[13]

MADELUNG O, 1964, PHYSICS 3 5 COMPOUND

[14] LATTICE-RELAXATION OF INAS HETEROEPITAXY ON GAAS [J].

MUNEKATA, H ;

CHANG, LL ;

WORONICK, SC ;

KAO, YH .

JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) :237-242

[15] ELECTRON TRANSPORT IN INSB, INAS AND INP [J].

RODE, DL .

PHYSICAL REVIEW B, 1971, 3 (10) :3287-&

[16] NUCLEATION AND STRAIN RELAXATION AT THE INAS/GAAS(100) HETEROJUNCTION [J].

SCHAFFER, WJ ;

LIND, MD ;

KOWALCZYK, SP ;

GRANT, RW .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03) :688-695

[17] ELECTRON TUNNELING AND CAPACITANCE STUDIES OF A QUANTIZED SURFACE ACCUMULATION LAYER [J].

TSUI, DC .

PHYSICAL REVIEW B, 1973, 8 (06) :2657-2669

[18] TRANSPORT-COEFFICIENTS OF INAS EPILAYERS [J].

WIEDER, HH .

APPLIED PHYSICS LETTERS, 1974, 25 (04) :206-208

← 1 2 →