FILAMENTARY THERMAL INSTABILITIES IN IMPATT DIODES

被引：6

作者：

HOLWAY, LH ^{[1
]}

机构：

[1] RAYTHEON CO,DIV RES,WALTHAM,MA 02154

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1977年 / 24卷 / 02期

关键词：

D O I：

10.1109/T-ED.1977.18684

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：80 / 86

页数：7

共 9 条

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[8] THEORETICAL AND EXPERIMENTAL STUDY OF GAAS IMPATT OSCILLATOR EFFICIENCY [J].

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