REDUCTION OF SECONDARY DEFECT FORMATION IN MEV B+ ION-IMPLANTED SI (100)

被引：29

作者：

LU, WX ^{[1
]}

QIAN, YH ^{[1
]}

TIAN, RH ^{[1
]}

WANG, ZL ^{[1
]}

SCHREUTELKAMP, RJ ^{[1
]}

LIEFTING, JR ^{[1
]}

SARIS, FW ^{[1
]}

机构：

[1] FOM,INST ATOM & MOLEC PHYS,1098 SJ AMSTERDAM,NETHERLANDS

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 18期

关键词：

D O I：

10.1063/1.102181

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1838 / 1840

页数：3

共 8 条

[1]

BRICE DK, 1975, ION IMPLANTATION RAN, V1

[2]

MAYE JW, 1970, ION IMPLANTATION SEM

[3]

NAMBA S, 1975, ION IMPLANTATION SEM

[4]

PRUSSIN S, 1985, J APPL PHYS, V57, P180, DOI 10.1063/1.334840

[5] EFFECT ON ELECTRICAL-PROPERTIES OF SEGREGATION OF IMPLANTED P+ AT DEFECT SITES IN SI [J].

SADANA, DK ;

STRATHMAN, M ;

WASHBURN, J ;

MAGEE, CW ;

MAENPAA, M ;

BOOKER, GR .

APPLIED PHYSICS LETTERS, 1980, 37 (07) :615-618

[6] DEPTH DISTRIBUTION OF SECONDARY DEFECTS IN 2-MEV BORON-IMPLANTED SILICON [J].

TAMURA, M ;

NATSUAKI, N ;

WADA, Y ;

MITANI, E .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (10) :3417-3420

[7] MEV-ENERGY B+, P+ AND AS+ ION-IMPLANTATION INTO SI [J].

TAMURA, M ;

NATSUAKI, N ;

WADA, Y ;

MITANI, E .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 21 (2-4) :438-446

[8] HIGH-ENERGY ION-IMPLANTATION [J].

ZIEGLER, JF .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 6 (1-2) :270-282

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