RELAXATION SEMICONDUCTORS - IN THEORY AND IN PRACTICE

被引：41

作者：

HAEGEL, NM

机构：

[1] Department of Materials Science and Engineering, University of California, Los Angeles, Los Angeles, 90024, CA

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1991年 / 53卷 / 01期

关键词：

D O I：

10.1007/BF00323427

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Relaxation semiconductors are materials dominated by free carrier transport and defined by the condition that the dielectric relaxation time tau-D is longer than the free carrier lifetime tau0. Novel transport behavior has been demonstrated, both theoretically and experimentally, to be associated with this regime of semiconductor behavior. This review surveys the history of the field, emphasizes recent experimental and modeling work and summarizes our current understanding of relaxation behavior in crystalline semiconductors.

引用

页码：1 / 7

页数：7

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