TRANSISTORS MADE IN SINGLE-CRYSTAL SOI FILMS

被引：2

作者：

COLINGE, JP

DEMOULIN, E

BENSAHEL, D

AUVERT, G

机构：

来源：

JOURNAL DE PHYSIQUE | 1983年 / 44卷 / NC-5期

关键词：

D O I：

10.1051/jphyscol:1983559

中图分类号：

学科分类号：

摘要：

引用

页码：409 / 413

页数：5

共 8 条

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CELLER, GK ;

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LISCHNER, DJ .

APPLIED PHYSICS LETTERS, 1983, 42 (01) :99-101

[2] USE OF SELECTIVE ANNEALING FOR GROWING VERY LARGE GRAIN SILICON ON INSULATOR FILMS [J].

COLINGE, JP ;

DEMOULIN, E ;

BENSAHEL, D ;

AUVERT, G .

APPLIED PHYSICS LETTERS, 1982, 41 (04) :346-347

[3] FIELD-EFFECT IN LARGE GRAIN POLYCRYSTALLINE SILICON [J].

COLINGE, JP ;

MOREL, H ;

CHANTE, JP .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (03) :197-201

[4]

COLINGE JP, 1982, MAY P ECS M MONTR, P238

[5] CW LASER ANNEAL OF POLYCRYSTALLINE SILICON - CRYSTALLINE-STRUCTURE, ELECTRICAL-PROPERTIES [J].

GAT, A ;

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MAGEE, TJ ;

PENG, J ;

HONG, JD .

APPLIED PHYSICS LETTERS, 1978, 33 (08) :775-778

[6] MOSFETS ON SILICON PREPARED BY MOVING MELT ZONE RECRYSTALLIZATION OF ENCAPSULATED POLYCRYSTALLINE SILICON ON AN INSULATING SUBSTRATE [J].

MABY, EW ;

GEIS, MW ;

LECOZ, YL ;

SILVERSMITH, DJ ;

MOUNTAIN, RW ;

ANTONIADIS, DA .

ELECTRON DEVICE LETTERS, 1981, 2 (10) :241-243

[7] EFFECTS OF GRAIN-BOUNDARIES ON LASER CRYSTALLIZED POLY-SI MOSFETS [J].

NG, KK ;

CELLER, GK ;

POVILONIS, EI ;

FRYE, RC ;

LEAMY, HJ ;

SZE, SM .

ELECTRON DEVICE LETTERS, 1981, 2 (12) :316-318

[8] HALOGEN LAMP RECRYSTALLIZATION OF SILICON ON INSULATING SUBSTRATES [J].

VU, DP ;

HAOND, M ;

BENSAHEL, D ;

DUPUY, M .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (01) :437-439

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