HALOGEN LAMP RECRYSTALLIZATION OF SILICON ON INSULATING SUBSTRATES

被引：34

作者：

VU, DP ^{[1
]}

HAOND, M ^{[1
]}

BENSAHEL, D ^{[1
]}

DUPUY, M ^{[1
]}

机构：

[1] CEN,ELECTR & TECHNOL INFORMAT LAB,F-38041 GRENOBLE,FRANCE

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 01期

关键词：

D O I：

10.1063/1.331677

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：437 / 439

页数：3

共 15 条

[1] LASER-INDUCED CRYSTALLIZATION OF SILICON ISLANDS ON AMORPHOUS SUBSTRATES - MULTILAYER STRUCTURES [J].

BIEGELSEN, DK ;

JOHNSON, NM ;

BARTELINK, DJ ;

MOYER, MD .

APPLIED PHYSICS LETTERS, 1981, 38 (03) :150-152

[2] USE OF SELECTIVE ANNEALING FOR GROWING VERY LARGE GRAIN SILICON ON INSULATOR FILMS [J].

COLINGE, JP ;

DEMOULIN, E ;

BENSAHEL, D ;

AUVERT, G .

APPLIED PHYSICS LETTERS, 1982, 41 (04) :346-347

[3] LATERAL EPITAXY BY SEEDED SOLIDIFICATION FOR GROWTH OF SINGLE-CRYSTAL SI FILMS ON INSULATORS [J].

FAN, JCC ;

GEIS, MW ;

TSAUR, BY .

APPLIED PHYSICS LETTERS, 1981, 38 (05) :365-367

[4] CRYSTALLOGRAPHIC ORIENTATION OF SILICON ON AN AMORPHOUS SUBSTRATE USING AN ARTIFICIAL SURFACE-RELIEF GRATING AND LASER CRYSTALLIZATION [J].

GEIS, MW ;

FLANDERS, DC ;

SMITH, HI .

APPLIED PHYSICS LETTERS, 1979, 35 (01) :71-74

[5] ZONE-MELTING RECRYSTALLIZATION OF ENCAPSULATED SILICON FILMS ON SIO2 - MORPHOLOGY AND CRYSTALLOGRAPHY [J].

GEIS, MW ;

SMITH, HI ;

TSAUR, BY ;

FAN, JCC ;

MABY, EW ;

ANTONIADIS, DA .

APPLIED PHYSICS LETTERS, 1982, 40 (02) :158-160

[6] CW LASER RECRYSTALLIZATION OF (100) SI ON AMORPHOUS SUBSTRATES [J].

GIBBONS, JF ;

LEE, KF ;

MAGEE, TJ ;

PENG, J ;

ORMOND, R .

APPLIED PHYSICS LETTERS, 1979, 34 (12) :831-833

[7] USE OF INCOHERENT-LIGHT FOR ANNEALING IMPLANTED SI WAFERS AND GROWING SINGLE-CRYSTAL SI ON SIO2 [J].

HAOND, M ;

VU, DP .

ELECTRONICS LETTERS, 1982, 18 (17) :727-728

[8] RECRYSTALLIZATION OF SI ON AMORPHOUS SUBSTRATES BY DOUGHNUT-SHAPED CW AR LASER-BEAM [J].

KAWAMURA, S ;

SAKURAI, J ;

NAKANO, M ;

TAKAGI, M .

APPLIED PHYSICS LETTERS, 1982, 40 (05) :394-395

[9] SINGLE-CRYSTAL SILICON-ON-OXIDE BY A SCANNING CW LASER-INDUCED LATERAL SEEDING PROCESS [J].

LAM, HW ;

PINIZZOTTO, RF ;

TASCH, AF .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (09) :1981-1986

[10] CHARACTERISTICS OF MOSFETS FABRICATED IN LASER-RECRYSTALLIZED POLYSILICON ISLANDS WITH A RETAINING WALL STRUCTURE ON AN INSULATING SUBSTRATE [J].

LAM, HW ;

TASCH, AF ;

HOLLOWAY, TC .

ELECTRON DEVICE LETTERS, 1980, 1 (10) :206-208

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