USE OF INCOHERENT-LIGHT FOR ANNEALING IMPLANTED SI WAFERS AND GROWING SINGLE-CRYSTAL SI ON SIO2

被引：13

作者：

HAOND, M

VU, DP

机构：

来源：

ELECTRONICS LETTERS | 1982年 / 18卷 / 17期

关键词：

D O I：

10.1049/el:19820493

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：727 / 728

页数：2

共 6 条

[1]

ANTONIADIS DA, 1978, ICL50192 STANF U TEC

[2] LATERAL EPITAXY BY SEEDED SOLIDIFICATION FOR GROWTH OF SINGLE-CRYSTAL SI FILMS ON INSULATORS [J].

FAN, JCC ;

GEIS, MW ;

TSAUR, BY .

APPLIED PHYSICS LETTERS, 1981, 38 (05) :365-367

[3] RAPID ISOTHERMAL ANNEALING OF ION-IMPLANTATION DAMAGE USING A THERMAL-RADIATION SOURCE [J].

FULKS, RT ;

RUSSO, CJ ;

HANLEY, PR ;

KAMINS, TI .

APPLIED PHYSICS LETTERS, 1981, 39 (08) :604-606

[4] MOSFETS ON SILICON PREPARED BY MOVING MELT ZONE RECRYSTALLIZATION OF ENCAPSULATED POLYCRYSTALLINE SILICON ON AN INSULATING SUBSTRATE [J].

MABY, EW ;

GEIS, MW ;

LECOZ, YL ;

SILVERSMITH, DJ ;

MOUNTAIN, RW ;

ANTONIADIS, DA .

ELECTRON DEVICE LETTERS, 1981, 2 (10) :241-243

[5] SUBGRAIN BOUNDARIES IN LATERALLY SEEDED SILICON-ON-OXIDE FORMED BY GRAPHITE STRIP HEATER RECRYSTALLIZATION [J].

PINIZZOTTO, RF ;

LAM, HW ;

VAANDRAGER, BL .

APPLIED PHYSICS LETTERS, 1982, 40 (05) :388-390

[6] PULSED THERMAL ANNEALING OF ARSENIC-IMPLANTED SILICON [J].

SCOVELL, PD .

ELECTRONICS LETTERS, 1981, 17 (12) :403-405

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