PULSED THERMAL ANNEALING OF ARSENIC-IMPLANTED SILICON

被引：5

作者：

SCOVELL, PD

机构：

来源：

ELECTRONICS LETTERS | 1981年 / 17卷 / 12期

关键词：

ARSENIC-IMPLANTED SILICON;

D O I：

10.1049/el:19810280

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A pulsed thermal annealing system is described which rapidly heats samples of 700 degree C and can successfully activate and regrow arsenic-implanted damaged layers. The junctions so formed are shown to be of low resistivity and exhibit good diode characteristics. Residual damage seen after the anneal does not appear to degrade junction performance.

引用

收藏

页码：403 / 405

页数：3

相关论文

共 11 条

[1] THERMALLY ASSISTED FLASH ANNEALING OF SILICON AND GERMANIUM [J].

COHEN, RL ;

WILLIAMS, JS ;

FELDMAN, LC ;

WEST, KW .

APPLIED PHYSICS LETTERS, 1978, 33 (08) :751-753

[2] LASER-SCANNING APPARATUS FOR ANNEALING OF ION-IMPLANTATION DAMAGE IN SEMICONDUCTORS [J].

GAT, A ;

GIBBONS, JF .

APPLIED PHYSICS LETTERS, 1978, 32 (03) :142-144

[3]

LAU SS, 1978, THIN FILMS INTERDIFF

[4] ELECTRON-BEAM ANNEALING OF ION-IMPLANTED SILICON [J].

MCMAHON, RA ;

AHMED, H .

ELECTRONICS LETTERS, 1979, 15 (02) :45-47

[5] RADIATION ANNEALING OF BORON-IMPLANTED SILICON WITH A HALOGEN LAMP [J].

NISHIYAMA, K ;

ARAI, M ;

WATANABE, N .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (10) :L563-L566

[6] SCANNING-ELECTRON-BEAM ANNEALING OF ARSENIC-IMPLANTED SILICON [J].

REGOLINI, JL ;

GIBBONS, JF ;

SIGMON, TW ;

PEASE, RFW ;

MAGEE, TJ ;

PENG, J .

APPLIED PHYSICS LETTERS, 1979, 34 (06) :410-412

[7] REGROWTH BEHAVIOR OF 3 DIFFERENT DAMAGE STRUCTURES IN P+ IMPLANTED AND SUBSEQUENTLY LASER ANNEALED SI [J].

SADANA, DK ;

WILSON, MC ;

BOOKER, GR ;

WASHBURN, J .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (07) :1589-1591

[8] LOW-TEMPERATURE THERMAL ANNEALING OF ARSENIC IMPLANTED SILICON [J].

SCOVELL, PD ;

YOUNG, JM .

ELECTRONICS LETTERS, 1980, 16 (16) :614-615

[9]

SEDGWICK TO, 1980, P MATERIALS RES SOC

[10]

SZE SM, 1969, PHYSICS SEMICONDUCTO