AUGER DEPTH PROFILING OF SILICON DIOXIDE ON SILICON - A FACTOR-ANALYSIS STUDY

被引：20

作者：

SARKAR, M ^{[1
]}

CALLIARI, L ^{[1
]}

GONZO, L ^{[1
]}

MARCHETTI, F ^{[1
]}

机构：

[1] IST RIC SCI & TECNOL,DIV SCI MAT,I-38050 TRENT,ITALY

来源：

SURFACE AND INTERFACE ANALYSIS | 1993年 / 20卷 / 01期

关键词：

D O I：

10.1002/sia.740200110

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

An Auger sputter profile across the SiO2/Si interface is analysed by means of factor analysis (FA). As compared to conventional treatments of Auger data, more information is obtained in this way. In particular, the L2,3VV spectrum and the depth distribution of silicon atoms in an oxygen-deficient situation with respect to the silicon dioxide stoichiometry are provided, thereby allowing a closer insight into the chemistry of this system.

引用

页码：60 / 68

页数：9

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