EFFECT OF COPPER ADDITIVE ON THE MICROSTRUCTURE AND ELECTRICAL-PROPERTIES OF POLYCRYSTALLINE ZINC-OXIDE

被引:14
作者
CHIOU, BS
CHUNG, MC
机构
[1] Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu
关键词
D O I
10.1111/j.1151-2916.1992.tb04435.x
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Nonohmic behavior is obtained for polycrystalline ZnO with copper as the only additive in the range 0.3 less-than-or-equal-to x less-than-or-equal-to 1 wt%. The effect of copper on the microstructure and electrical behavior of ZnO:Cu ceramics is investigated. The leakage current decreases and the breakdown electric field increases as the copper concentration increases. The large apparent dielectric constant of ZnO:Cu ceramic (k > > k(ZnO), k(ZnO) is the dielectric constant of pure ZnO) is attributed to the grain boundary barrier layer effect. A Schottky barrier height of 0.27-0.46 eV is obtained for various copper-added samples, depending on sintering temperatures.
引用
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页码:3363 / 3368
页数:6
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