A NOVEL SCHEME FOR DETECTION OF DEFECTS IN III-V-SEMICONDUCTORS BY CATHODOLUMINESCENCE

被引：17

作者：

MAREK, J

GEISS, R

GLASSMAN, LM

SCOTT, MP

机构：

[1] IBM CORP,RES,SAN JOSE,CA 95193

[2] HEWLETT PACKARD CO,TECHNOL RES CTR,PALO ALTO,CA 94304

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1985年 / 132卷 / 06期

关键词：

D O I：

10.1149/1.2114153

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1502 / 1504

页数：3

共 8 条

[1]

BALK LJ, 1976, 9TH P SEM S, P257

[2] SPATIALLY RESOLVED CATHODOLUMINESCENCE STUDY OF SEMI-INSULATING GAAS SUBSTRATES [J].

CHIN, AK ;

VONNEIDA, AR ;

CARUSO, R .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (10) :2386-2388

[3] INVESTIGATION OF IMPURITY VARIATIONS BY CATHODOLUMINESCENCE IMAGING - APPLICATION TO GASB-TE [J].

CHIN, AK ;

BONNER, WA .

APPLIED PHYSICS LETTERS, 1982, 40 (03) :248-251

[4] ROLE OF DISLOCATIONS IN SEMI-INSULATION MECHANISM IN UNDOPED LEC GAAS CRYSTAL [J].

KAMEJIMA, T ;

SHIMURA, F ;

MATSUMOTO, Y ;

WATANABE, H ;

MATSUI, J .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (11) :L721-L723

[5] ELECTRON-BEAM PENETRATION IN GAAS [J].

MARTINELLI, RU ;

WANG, CC .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (07) :3350-3351

[6] DIRECT OBSERVATION OF DISLOCATION EFFECTS ON THRESHOLD VOLTAGE OF A GAAS FIELD-EFFECT TRANSISTOR [J].

MIYAZAWA, S ;

ISHII, Y ;

ISHIDA, S ;

NANISHI, Y .

APPLIED PHYSICS LETTERS, 1983, 43 (09) :853-855

[7]

PETROFF PM, 11TH P ANN SEM S, P325

[8] CHARACTERIZATION OF SEMI-INSULATING LIQUID ENCAPSULATED CZOCHRALSKI GAAS BY CATHODOLUMINESCENCE [J].

WAKEFIELD, B ;

LEIGH, PA ;

LYONS, MH ;

ELLIOTT, CR .

APPLIED PHYSICS LETTERS, 1984, 45 (01) :66-68

← 1 →