HIGH-RESOLUTION ELECTRON-BEAM LITHOGRAPHY ON CAF2

[1] FORMATION OF AN EPITAXIAL SI INSULATOR SI STRUCTURE BY VACUUM DEPOSITION OF CAF2 AND SI [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1982, 21 (01) : 187 - 191

[2] 250-A LINEWIDTHS WITH PMMA ELECTRON RESIST [J]. APPLIED PHYSICS LETTERS, 1978, 33 (05) : 392 - 394

[3] THIN-FILM CAF2 INORGANIC ELECTRON RESIST AND OPTICAL-READ STORAGE MEDIUM [J]. APPLIED PHYSICS LETTERS, 1982, 41 (11) : 1102 - 1104

[4] Hobbs L.W., 1979, INTRO ANAL ELECTRON

[5] INSITU VAPORIZATION OF VERY LOW-MOLECULAR WEIGHT RESISTS USING 1-2 NM DIAMETER ELECTRON-BEAMS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (04): : 1117 - 1120

[6] 1974, CRC HDB CHEM PHYSICS, P88

[1] FORMATION OF AN EPITAXIAL SI INSULATOR SI STRUCTURE BY VACUUM DEPOSITION OF CAF2 AND SI [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1982, 21 (01) : 187 - 191

[2] 250-A LINEWIDTHS WITH PMMA ELECTRON RESIST [J]. APPLIED PHYSICS LETTERS, 1978, 33 (05) : 392 - 394

[3] THIN-FILM CAF2 INORGANIC ELECTRON RESIST AND OPTICAL-READ STORAGE MEDIUM [J]. APPLIED PHYSICS LETTERS, 1982, 41 (11) : 1102 - 1104

[4] Hobbs L.W., 1979, INTRO ANAL ELECTRON

[5] INSITU VAPORIZATION OF VERY LOW-MOLECULAR WEIGHT RESISTS USING 1-2 NM DIAMETER ELECTRON-BEAMS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (04): : 1117 - 1120

[6] 1974, CRC HDB CHEM PHYSICS, P88