X-RAY PHOTOELECTRON-SPECTROSCOPY OF CU-IN-SE-N AND CU-IN-SE THIN-FILMS

The Cu, In, and Se core-level electron binding energies of the p-type Cu-In-Se-N thin film were larger than those of the n-type Cu-In-Se thin film. The positive shift of the core-electron binding energies for the Cu-In-Se-N film is consistent with that expected from the conduction types of the films. Holes were positioned in the Cu-Se antibonding orbitals of the Cu-In-Se-N film. The analysis using the Auger parameter revealed that the Cu-Se bonding interaction is stronger for the Cu-In-Se-N film than for the Cu-In-Se film.