CHARACTERIZATION OF INGAAS SURFACE PASSIVATION STRUCTURE HAVING AN ULTRATHIN SI INTERFACE CONTROL LAYER

被引：22

作者：

HASEGAWA, H

AKAZAWA, M

ISHII, H

URAIE, A

IWADATE, H

OHUE, E

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1990年 / 8卷 / 04期

关键词：

D O I：

10.1116/1.584980

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：867 / 873

页数：7

共 26 条

[1] AKAZAWA M, 1989, JPN J APPL PHYS 2, V28, pL2095
[2] AKAZAWA M, 1988, 1988 FALL M JAP SOC
[3] AKAZAWA M, 1989, UNPUB SOLID STATE DE
[4] BRIGGS D, 1983, PRACTICAL SURFACE AN, pCH5
[5] GAAS MIS STRUCTURES WITH SIO2 USING A THIN SILICON INTERLAYER
FOUNTAIN, GG
HATTANGADY, SV
VITKAVAGE, DJ
RUDDER, RA
MARKUNAS, RJ
[J]. ELECTRONICS LETTERS, 1988, 24 (18) : 1134 - 1135
[6] SPECTROSCOPIC AND ELECTRICAL STUDIES OF GAAS METAL-OXIDE SEMICONDUCTOR STRUCTURES
FREEOUF, JL
SILBERMAN, JA
WRIGHT, SL
TIWARI, S
BATEY, J
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (04): : 854 - 860
[7] UNIFIED DISORDER INDUCED GAP STATE MODEL FOR INSULATOR-SEMICONDUCTOR AND METAL-SEMICONDUCTOR INTERFACES
HASEGAWA, H
OHNO, H
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (04): : 1130 - 1138
[8] GAAS AND IN0.53GA0.47AS MIS STRUCTURES HAVING AN ULTRATHIN PSEUDOMORPHIC INTERFACE CONTROL LAYER OF SI PREPARED BY MBE
HASEGAWA, H
AKAZAWA, M
MATSUZAKI, KI
ISHII, H
OHNO, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (12): : L2265 - L2267
[9] CONTROL OF COMPOUND SEMICONDUCTOR INSULATOR INTERFACES BY AN ULTRATHIN MOLECULAR-BEAM EPITAXY SI LAYER
HASEGAWA, H
AKAZAWA, M
ISHII, H
MATSUZAKI, K
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (04): : 870 - 878
[10] ON THE ELECTRICAL-PROPERTIES OF COMPOUND SEMICONDUCTOR INTERFACES IN METAL-INSULATOR SEMICONDUCTOR STRUCTURES AND THE POSSIBLE ORIGIN OF INTERFACE STATES
HASEGAWA, H
SAWADA, T
[J]. THIN SOLID FILMS, 1983, 103 (1-2) : 119 - 140

← 1 2 3 →