INFLUENCE OF B-CONCENTRATION ON RECRYSTALLIZATION OF POLYCRYSTALLINE SI

被引：7

作者：

CARLSSON, JRA

GONG, SF

LI, XH

HENTZELL, HTG

机构：

[1] Department of Physics and Measurement Technology, Linköping University

来源：

JOURNAL OF APPLIED PHYSICS | 1991年 / 70卷 / 09期

关键词：

D O I：

10.1063/1.349027

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

B-doped polycrystalline Si films were prepared by electron beam evaporation and heat treatment in order to study the influence of B concentration and annealing temperature on recrystallization of polycrystalline Si. By using cross-sectional transmission electron microscopy and Auger electron spectroscopy it is shown that: (1) at a B concentration between 1 and 10 at. %, post-annealing at 1100-degrees-C results in an enhanced solid phase epitaxial growth; (2) at a B concentration higher than 10 at. %, post-annealing results in a retarded recrystallization of polycrystalline Si; (3) a relatively stable amorphous alloy can form at a B concentration of approximately 35 at. % up to 1100-degrees-C. The mechanisms of the enhancement and the retardation are discussed.

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页码：4857 / 4862

页数：6

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