NATIVE-OXIDE DEFINED IN0.5(ALXGA1-X)0.5P QUANTUM-WELL HETEROSTRUCTURE WINDOW LASERS (660 NM)

Data are presented demonstrating In0.5(AlxGa1-x)0.5P quantum well heterostructure lasers with extended current-blocking windows (approximately 75 mum/window) that exhibit significant improvements in output power (approximately 2 X) compared to lasers with no windows. The windows and active stripes are defined by the formation of a thin (approximately 1000 angstrom, patterned) native oxide via H2O vapor oxidation (550-degrees-C) of the high-gap In0.5(AlxGa1-x)0.5P upper confining layer. Devices operating at approximately 660 nm with a 40 mum wide emitting aperture (approximately 500 mum cavity) and approximately 75 mum windows (total window length approximately 150 mum) exhibit 300 K continuous output powers > 130 mW/facet (uncoated) and pulsed output powers > 575 mW/facet (uncoated). Improvements in output power result from decreased heating at the facets and defocusing of the optical wave in the unpumped window regions.