NATIVE-OXIDE STRIPE-GEOMETRY IN0.5(ALXGA1-X)0.5P-IN0.5GA0.5P HETEROSTRUCTURE LASER-DIODES

被引：17

作者：

KISH, FA

CARACCI, SJ

HOLONYAK, N

DALLESASSE, JM

SUGG, AR

FLETCHER, RM

KUO, CP

OSENTOWSKI, TD

CRAFORD, MG

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

[2] HEWLETT PACKARD CO,DIV OPTOELECTR,SAN JOSE,CA 95131

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 03期

关键词：

D O I：

10.1063/1.105593

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Data are presented demonstrating the formation of stable, device-quality native oxides from high Al composition In0.5(Al(x)Ga(1-x))0.5P (x approximately 0.9) via reaction with H2O vapor (in N2 carrier gas) at elevated temperatures (greater-than-or-equal-to 500-degrees-C). The oxide exhibits excellent current-blocking characteristics and is employed to fabricate continuous room-temperature stripe-geometry In0.5(Al(x)Ga(l-x))0.5P-In0.5Ga0.5P double-heterostructure laser diodes.

引用

收藏

页码：354 / 356

页数：3

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