LOW-THRESHOLD DISORDER-DEFINED NATIVE-OXIDE DELINEATED BURIED-HETEROSTRUCTURE ALXGA1-XAS-GAAS QUANTUM-WELL LASERS

被引：17

作者：

KISH, FA

CARACCI, SJ

HOLONYAK, N

DALLESASSE, JM

HOFLER, GE

BURNHAM, RD

SMITH, SC

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

[2] AMOCO TECHNOL CO,AMOCO RES CTR,NAPERVILLE,IL 60566

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 16期

关键词：

D O I：

10.1063/1.105084

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Impurity-induced layer disordering (IILD) along with oxidation (native oxide) of high-gap AlxGa1-xAs confining layers is employed to fabricate low-threshold stripe-geometry buried-heterostructure AlxGa1-xAs-GaAs quantum well heterostructure (QWH) lasers. Silicon IILD is used to intermix the quantum well and waveguide regions with the surrounding confining layers (beyond the laser stripe) to provide optical and current confinement in the QW region of the stripe. The high-gap AlxGa1-xAs upper confining layer is oxidized in a self-aligned configuration defined by the contact stripe and reduces IILD leakage currents at the crystal surface and diffused shunt junctions. AlxGa1-xAs-GaAs QWH lasers fabricated by this method have continuous 300 K threshold currents as low as 5 mA and powers > 31 mW/facet for approximately 3-mu-m-wide active regions.

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页码：1765 / 1767

页数：3

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