RHEED REFLEX PROFILE ANALYSIS AND PHASE-LOCKED EPITAXY OF ZNSE ON (001)-ORIENTED GAAS

被引：8

作者：

GRIESCHE, J

HOFFMANN, N

RABE, M

JACOBS, K

机构：

[1] Humboldt University, Department of Physics, MBE Laboratory, D-10115 Berlin

来源：

APPLIED SURFACE SCIENCE | 1994年 / 75卷 / 1-4期

关键词：

D O I：

10.1016/0169-4332(94)90137-6

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

ZnSe layers have been grown by MBE in both the conventional and the phase-locked epitaxy (PLE) mode. RHEED patterns have been taken at different stages during growth interruptions. The intensity profile along the 00 rod has been analyzed with respect to the surface morphology. During growth interruptions, the surface is smoothed by two processes with different time constants. In the PLE mode, surprisingly, the present results indicate that the number of RHEED oscillation periods observed does not coincide with the number of monolayers obtained.

引用

页码：64 / 69

页数：6

共 8 条

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