INCORPORATION PROCESSES IN MBE GROWTH OF ZNSE

被引：16

作者：

VENKATASUBRAMANIAN, R ^{[1
]}

OTSUKA, N ^{[1
]}

QIU, J ^{[1
]}

KOLODZIEJSKI, LA ^{[1
]}

GUNSHOR, RL ^{[1
]}

机构：

[1] PURDUE UNIV,SCH MAT ENGN,W LAFAYETTE,IN 47907

来源：

JOURNAL OF CRYSTAL GROWTH | 1989年 / 95卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(89)90460-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：533 / 537

页数：5

共 12 条

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[5] MOLECULAR-BEAM EPITAXIAL-GROWTH OF ZNTE AND ZNSE [J].

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[6] WIDE GAP II-VI-SUPERLATTICES OF ZNSE-ZN1-XMNXSE [J].

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[7]

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[8] RHEED OBSERVATION ON (001)ZNSE SURFACE - MBE SURFACE PHASE-DIAGRAM AND KINETIC-BEHAVIOR OF ZN AND SE ADATOMS [J].

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[9]

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[10] GROWTH-PROCESS IN ATOMIC LAYER EPITAXY OF ZN CHALCOGENIDE SINGLE CRYSTALLINE FILMS ON (100) GAAS [J].

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