MOSSBAUER STUDY OF DONOR-HYDROGEN COMPLEXES IN SILICON

被引：6

作者：

LIANG, ZN ^{[1
]}

NIESEN, L ^{[1
]}

机构：

[1] MAT SCI CTR,ALGEMENE NAT KUNDE LAB,9718 CM GRONINGEN,NETHERLANDS

来源：

HYPERFINE INTERACTIONS | 1990年 / 60卷 / 1-4期

关键词：

D O I：

10.1007/BF02399861

中图分类号：

O64 [物理化学（理论化学）、化学物理学]; O56 [分子物理学、原子物理学];

学科分类号：

070203 ; 070304 ; 081704 ; 1406 ;

摘要：

Mössbauer spectroscopy has been applied to study the Sb-H complex in Si, using the 23.9 keV transition of119Sn populated in the decay of119Sb. Hydrogen was introduced into a well annealed Si crystal, previously implanted with119Sb ions. The relative intensity of the H-associated line reaches 26% at the highest hydrogen dose of 1016 cm-2. The Sb-H complexes dissociate around 440 K. No Sb-H complexes were observed in material that remained p-type after implantation of119Sb. The implications of these measurements for the structure of the Sb-H complex and for the charge states of the diffusing hydrogen are discussed. © 1990 J.C. Baltzer A.G., Scientific Publishing Company.

引用

页码：749 / 752

页数：4

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