DOPING OF MICROCRYSTALLINE SI-H,CL FILMS IN RF GLOW-DISCHARGE

被引：11

作者：

BRUNO, G

CAPEZZUTO, P

CRAMAROSSA, F

BARBAROSSA, V

AUGELLI, V

MURRI, R

机构：

[1] UNIV BARI,CNR,CTR STUDIO CHIM PLASMI,I-70126 BARI,ITALY

[2] UNIV BARI,DEPARTIMENTO FIS,I-70126 BARI,ITALY

[3] UNIV BARI,GRP NAZL STRUTTURA MAT,I-70126 BARI,ITALY

来源：

关键词：

D O I：

10.1016/0022-3093(83)90295-8

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：815 / 818

页数：4

共 11 条

[1] PHOTOCONDUCTIVITY IN AMORPHOUS SI-H-CL FILMS
AUGELLI, V
MURRI, R
ALBA, N
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (01) : 248 - 251
[2] OPTICAL-CONSTANTS OF SILICON FILMS DEPOSITED BY THE R.F. GLOW-DISCHARGE OF SICL4
AUGELLI, V
MURRI, R
SCHIAVULLI, L
BRUNO, G
CAPEZZUTO, P
CRAMAROSSA, F
EVANGELISTI, F
FORTUNATO, G
[J]. THIN SOLID FILMS, 1981, 86 (04) : 359 - 367
[3] AUGELLI V, J NONCRYSTALLINE SOL
[4] RF PLASMA DEPOSITION OF AMORPHOUS-SILICON FILMS FROM SICL4-H2
BRUNO, G
CAPEZZUTO, P
CRAMAROSSA, F
DAGOSTINO, R
[J]. THIN SOLID FILMS, 1980, 67 (01) : 103 - 107
[5] BRUNO G, THIN SOLID FILMS
[6] CHARACTERIZATION AND LUMINESCENCE OF A-SI-H-CL FILMS
FORTUNATO, G
EVANGELISTI, F
BRUNO, G
CAPEZZUTO, P
CRAMAROSSA, F
AUGELLI, V
MURRI, R
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1981, 46 (01) : 95 - 104
[7] GROSSMAN E, 1981, J PHYS, V42, P361
[8] STRUCTURAL AND SOME OTHER PROPERTIES OF SILICON DEPOSITED IN AN SICL4-H2 RF DISCHARGE
IQBAL, Z
CAPEZZUTO, P
BRAUN, M
OSWALD, HR
VEPREK, S
BRUNO, G
CRAMAROSSA, F
STUSSI, H
BRUNNER, J
SCHARLI, M
[J]. THIN SOLID FILMS, 1982, 87 (01) : 43 - 51
[9] INFRARED VIBRATIONAL-SPECTRA OF CHLORINATED AND HYDROGENATED AMORPHOUS-SILICON
KALEM, S
CHEVALLIER, J
ALDALLAL, S
BOURNEIX, J
[J]. JOURNAL DE PHYSIQUE, 1981, 42 (NC4): : 361 - 363
[10] GROWTH-MORPHOLOGY AND DEFECTS IN PLASMA-DEPOSITED A-SI-H FILMS
KNIGHTS, JC
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) : 159 - 170