INSITU X-RAY-DIFFRACTION STUDY OF MELTING IN GOLD CONTACTS TO GALLIUM-ARSENIDE

被引：12

作者：

ZENG, XF

CHUNG, DDL

机构：

[1] CARNEGIE MELLON UNIV,DEPT MET ENGN & MAT SCI,PITTSBURGH,PA 15213

[2] CARNEGIE MELLON UNIV,CTR JOINING MAT,PITTSBURGH,PA 15213

来源：

SOLID-STATE ELECTRONICS | 1984年 / 27卷 / 04期

关键词：

D O I：

10.1016/0038-1101(84)90167-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：339 / 345

页数：7

共 13 条

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[10] INSITU MEASUREMENTS OF ARSENIC LOSSES DURING ANNEALING OF USUAL EVAPORATED CONTACTS OF GAAS GUNN DIODES [J].

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