A MECHANISM FOR RADIATION-INDUCED DEGRADATION IN GAAS FIELD-EFFECT TRANSISTORS

被引：8

作者：

BUOT, FA

ANDERSON, WT

CHRISTOU, A

CAMPBELL, AB

KNUDSON, AR

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 57卷 / 02期

关键词：

D O I：

10.1063/1.334741

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：581 / 590

页数：10

共 37 条

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