ELECTRONIC-STRUCTURE OF THE PROTOTYPICAL AS-SI(111)-1X1 SURFACE INVESTIGATED BY INVERSE-PHOTOEMISSION SPECTROSCOPY

被引：9

作者：

BOUZIDI, S ^{[1
]}

ANGOT, T ^{[1
]}

COLETTI, F ^{[1
]}

DEBEVER, JM ^{[1
]}

GUYAUX, JL ^{[1
]}

THIRY, PA ^{[1
]}

机构：

[1] FAC UNIV NOTRE DAME PAIX,INST STUDIES INTERFACE SCI,INTERDISCIPLINAIRE SPECT ELECTR LAB,B-5000 NAMUR,BELGIUM

来源：

PHYSICAL REVIEW B | 1994年 / 49卷 / 23期

关键词：

D O I：

10.1103/PhysRevB.49.16539

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Angle-resolved inverse-photoemission spectra have been measured on the nonreconstructed As:Si(111)-1 X 1 surface along the two main directions GAMMAKBAR and GAMMAMBAR of the surface Brillouin zone. We observed three empty bands, the lower one of which is characteristic of a surface state partly resonant with bulk states in good agreement with theoretical calculations. We also observed a marked asymmetry in the dispersion along the M'GAMMAMBAR direction.

引用

页码：16539 / 16543

页数：5

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