N-TYPE (PB)TE DOPING OF GAAS AND ALXGA1-XSB GROWN BY MOLECULAR-BEAM EPITAXY

被引：11

作者：

NEWSTEAD, SM ^{[1
]}

KERR, TM ^{[1
]}

WOOD, CEC ^{[1
]}

机构：

[1] GEC HIRST RES LABS,LONDON HA9 7PP,MIDDX,ENGLAND

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 09期

关键词：

D O I：

10.1063/1.344004

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4184 / 4187

页数：4

共 17 条

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[3]

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[5]

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[6]

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[7] S-DOPING OF MBE-GASB WITH H2S GAS [J].

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[9]

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[10]

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