GROWTH-CHARACTERISTICS OF OXIDE PRECIPITATES IN HEAVILY DOPED SILICON-CRYSTALS

被引：21

作者：

MATSUMOTO, S ^{[1
]}

ISHIHARA, I ^{[1
]}

KANEKO, H ^{[1
]}

HARADA, H ^{[1
]}

ABE, T ^{[1
]}

机构：

[1] SHIN ETSU HANDOTAI CO, ANNAKA, GUNMA 37901, JAPAN

来源：

APPLIED PHYSICS LETTERS | 1985年 / 46卷 / 10期

关键词：

D O I：

10.1063/1.95780

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：957 / 959

页数：3

共 13 条

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APPLIED PHYSICS LETTERS, 1981, 38 (11) :888-890

[2] PRECIPITATION OF OXYGEN IN SILICON [J].

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PATEL, JR .

APPLIED PHYSICS LETTERS, 1977, 30 (01) :31-33

[3] THE EFFECTS OF PROCESSING CONDITIONS ON THE OUT-DIFFUSION OF OXYGEN FROM CZOCHRALSKI SILICON [J].

HECK, D ;

TRESSLER, RE ;

MONKOWSKI, J .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (10) :5739-5743

[4]

INOUE N, 1981, SEMICONDUCTOR SILICO, P282

[5]

Ito Y., UNPUB

[6] DIFFUSIVITY OF OXYGEN IN SILICON DURING STEAM OXIDATION [J].

MIKKELSEN, JC .

APPLIED PHYSICS LETTERS, 1982, 40 (04) :336-337

[7]

OSAKA J, 1980, APPL PHYS LETT, V36, P288, DOI 10.1063/1.91464

[8]

PATEL JR, 1981, SEMICONDUCTOR SILICO, P189

[9]

ROZGONYI GA, 1983, DEFECTS SEMICONDUCTO, V2, P181

[10] INTRINSIC GETTERING BY OXIDE PRECIPITATE INDUCED DISLOCATIONS IN CZOCHRALSKI SI [J].

TAN, TY ;

GARDNER, EE ;

TICE, WK .

APPLIED PHYSICS LETTERS, 1977, 30 (04) :175-176

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