MODULATION OF THE COUPLING OF A NEAR-SURFACE GAAS/GA0.7AL0.3AS QUANTUM-WELL WITH ITS FREE-SURFACE

被引：5

作者：

HOUZAY, F

MOISON, JM

ELCESS, K

BARTHE, F

机构：

[1] Laboratoire de Bagneux The Laboratoire, Bagneux is Unité de Recherche Associée au C.N.R.S. URA250., Centre National d'Etudes des Télécommunications FRANCE TELECOM, 92220 Bagneux

来源：

SUPERLATTICES AND MICROSTRUCTURES | 1991年 / 9卷 / 04期

关键词：

D O I：

10.1016/0749-6036(91)90180-Y

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The states confined in a GaAs/Ga0.7Al0.3 quantum well interact with the states localized at the free surface of its topmost barrier when the thickness of this barrier is decreased below ≈400Å. We show here that this interaction and hence the behaviour of carriers confined in the well can be modulated by in situ treatments applied to this free surface. © 1991.

引用

页码：507 / 509

页数：3

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