MICROWAVE FIELD-EFFECT TRANSISTORS 1976

[71] MEMORY-CELL ARRAY WITH NORMALLY OFF-TYPE SCHOTTKY-BARRIER FETS [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1972, SC 7 (04) : 277 - &

[72] GALLIUM ARSENIDE SELF-ALIGNED GATE FIELD-EFFECT TRANSISTORS [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1971, 59 (08): : 1244 - &

[73] DRIVER MC, 1973, IEEE INT ELECTRON DE, P393

[74] MEDIUM-POWER GAAS FIELD-EFFECT TRANSISTORS [J]. ELECTRONICS LETTERS, 1975, 11 (05) : 104 - 105

[75] DRUKIER I, 1975, P CORNELL C ACTIVE S, P297

[76] GAAS-GAALAS HETEROJUNCTION TRANSISTOR FOR HIGH-FREQUENCY OPERATION [J]. SOLID-STATE ELECTRONICS, 1972, 15 (12) : 1339 - +

[77] EISENBERG J, 1973, MICROWAVES, V12, P52

[78] Eisenberg J. A., 1974, Microwaves, V13, p36, 40, 42

[79] Engberg J., 1974, 4th European Microwave Conference, P385, DOI 10.1109/EUMA.1974.332078

[80] A WIDE-BAND LOW NOISE L-BAND BALANCED TRANSISTOR AMPLIFIER [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1965, 53 (03): : 237 - &

[71] MEMORY-CELL ARRAY WITH NORMALLY OFF-TYPE SCHOTTKY-BARRIER FETS [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1972, SC 7 (04) : 277 - &

[72] GALLIUM ARSENIDE SELF-ALIGNED GATE FIELD-EFFECT TRANSISTORS [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1971, 59 (08): : 1244 - &

[73] DRIVER MC, 1973, IEEE INT ELECTRON DE, P393

[74] MEDIUM-POWER GAAS FIELD-EFFECT TRANSISTORS [J]. ELECTRONICS LETTERS, 1975, 11 (05) : 104 - 105

[75] DRUKIER I, 1975, P CORNELL C ACTIVE S, P297

[76] GAAS-GAALAS HETEROJUNCTION TRANSISTOR FOR HIGH-FREQUENCY OPERATION [J]. SOLID-STATE ELECTRONICS, 1972, 15 (12) : 1339 - +

[77] EISENBERG J, 1973, MICROWAVES, V12, P52

[78] Eisenberg J. A., 1974, Microwaves, V13, p36, 40, 42

[79] Engberg J., 1974, 4th European Microwave Conference, P385, DOI 10.1109/EUMA.1974.332078

[80] A WIDE-BAND LOW NOISE L-BAND BALANCED TRANSISTOR AMPLIFIER [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1965, 53 (03): : 237 - &