A REVIEW OF REACTIVE ION-BEAM ETCHING FOR PRODUCTION

被引:18
作者
REVELL, PJ
GOLDSPINK, GF
机构
关键词
D O I
10.1016/0042-207X(84)90083-6
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:455 / 462
页数:8
相关论文
共 75 条
[1]  
Asakawa K., 1981, Japanese Journal of Applied Physics, V20, P93
[2]   FLUX DENSITY EQUATIONS FOR TOPOGRAPHICAL EVOLUTION OF FEATURES ON ION BOMBARDED SURFACES. [J].
Belson, J. ;
Wilson, I.H. .
Radiation effects, 1980, 51 (1-2) :27-33
[3]  
BOLLINGER D, 1980, SOLID STATE TECHNOL, V23, P79
[4]   UNIFORM DEPTH PROFILING IN X-RAY PHOTOELECTRON-SPECTROSCOPY (ELECTRON-SPECTROSCOPY FOR CHEMICAL-ANALYSIS) [J].
BRADLEY, L ;
BOSWORTH, YM ;
BRIGGS, D ;
GIBSON, VA ;
OLDMAN, RJ ;
EVANS, AC ;
FRANKS, J .
APPLIED SPECTROSCOPY, 1978, 32 (02) :175-177
[5]   REACTIVE ION-BEAM ETCHING OF SIO2 AND POLYCRYSTALLINE SILICON [J].
BROWN, DM ;
HEATH, BA ;
COUTUMAS, T ;
THOMPSON, GR .
APPLIED PHYSICS LETTERS, 1980, 37 (02) :159-161
[6]   CONSIDERATIONS ON HIGH-RESOLUTION PATTERNS ENGRAVED BY ION ETCHING [J].
CANTAGREL, M .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, ED22 (07) :483-486
[7]  
CANTAGREL M, 1973, J MATER SCI, V8, P1711, DOI 10.1007/BF02403521
[8]  
CHAMBERS AA, 1982, SOLID STATE TECH AUG, P93
[9]  
Chapman B., 1980, GLOW DISCHARGE PROCE
[10]  
CLAMPITT R, 1981, P SEMICONDUCTOR INT