PROCESS MODELING FOR SUBMICRON COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR VERY LARGE-SCALE INTEGRATED-CIRCUITS

被引：5

作者：

KRUSIUS, JP

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 1986年 / 4卷 / 03期

关键词：

D O I：

10.1116/1.574005

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

收藏

页码：905 / 911

页数：7

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