RESIST EXPOSURE WITH LIGHT-IONS

被引:23
作者
ADESIDA, I [1 ]
ANDERSON, C [1 ]
WOLF, ED [1 ]
机构
[1] CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1983年 / 1卷 / 04期
关键词
D O I
10.1116/1.582757
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1182 / 1185
页数:4
相关论文
共 10 条
[1]   A STUDY OF ELECTRON PENETRATION IN SOLIDS USING A DIRECT MONTE-CARLO APPROACH [J].
ADESIDA, I ;
SHIMIZU, R ;
EVERHART, TE .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (11) :5962-5969
[2]   ION-BOMBARDMENT OF RESISTS [J].
ADESIDA, I .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 209 (MAY) :79-86
[3]   MONTE-CARLO SIMULATION OF ION-BEAM PENETRATION IN SOLIDS [J].
ADESIDA, I ;
KARAPIPERIS, L .
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1982, 61 (3-4) :223-233
[4]  
ADESIDA I, UNPUB
[5]  
GIBBONS JF, 1975, PROJECTED RANGE STAT
[6]   PARAMETERS AFFECTING ELECTRON-BEAM SENSITIVITY OF POLY(METHYL METHACRYLATE) [J].
GIPSTEIN, E ;
OUANO, AC ;
JOHNSON, DE ;
NEED, OU .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1977, 21 (02) :143-153
[7]   ION-BEAM EXPOSURE CHARACTERISTICS OF RESISTS [J].
HALL, TM ;
WAGNER, A ;
THOMPSON, LF .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (06) :1889-1892
[8]   ION-BEAM EXPOSURE PROFILES IN PMMA-COMPUTER SIMULATION [J].
KARAPIPERIS, L ;
ADESIDA, I ;
LEE, CA ;
WOLF, ED .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (04) :1259-1263
[9]   ION-BEAM EXPOSURE OF RESIST MATERIALS [J].
KOMURO, M ;
ATODA, N ;
KAWAKATSU, H .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (03) :483-490
[10]   ION-BEAM SENSITIVITY OF POLYMER RESISTS [J].
RYSSEL, H ;
HABERGER, K ;
KRANZ, H .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (04) :1358-1362